ASTM F95-89(2000) PDF
Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003)
Название (английский):
ASTM F95-89(2000)
Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003)
- Статус документа:
- Отменён
- Формат:
- Электронный (PDF)
- Дата публикации:
- 16 августа 2017 г.
- SKU:
- ASTM F95-89(2000)