Semiconductor devices. Micro-electromechanical devices - Description and measurement methods for micro trench and needle structures
Semiconductor devices. Micro-electromechanical devices - Description and measurement methods for micro trench and needle structures
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What is BS EN 62047-26 - Description and measurement methods for micro trench and needle structures about ?
BS EN 62047-26 is the 26th part of an international standard used for semiconductor devices. This test method helps in measuring the interfacial adhesion energy in microelectromechanical devices. BS EN 62047-26 specifies descriptions of trench structure and needle structure on a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures. For trench structures, BS EN 62047-26 applies to structures with a depth of 1 μm to 100 μm; walls and trenches with respective widths of 5 μm to 150 μm; and aspect ratio of 0.0067 to 20. For needle structures, BS EN 62047-26 applies to structures with three or four faces with a height, horizontal width, and vertical width of 2 μm or larger...
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