Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
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What is BS EN 62417 - Metal-oxide semiconductor field effect transistors (MOSFETs) about?
BS EN 62417 is an international standard used for Semiconductor devices. BS EN 62417 provides a wafer-level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide-semiconductor field-effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g., by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors. Note: BS EN 62417 is applicable to both active and parasitic field-effect transistors.
Who is BS EN 62417 - Metal-oxide semiconductor field effect transistors (MOSFETs) for?
BS EN 62417 on Semiconductor devices is useful for:
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