BS IEC 63068-2:2019 PDF

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using optical inspection

Название (английский):

BS IEC 63068-2:2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using optical inspection

Статус документа:: Действующий
Формат:: Электронный (PDF)
Дата публикации:: 28 февраля 2019 г.
ICS:: 31.080.99
SKU:: BS IEC 63068-2:2019

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Abstract

What is BS IEC 63068 ‑ 2 - Silicon carbide homoepitaxial (SiC) wafer about?

BS IEC 63068 is a series of international standards for semiconductor devices that specifies the defects in silicon carbide homoepitaxial (SiC) wafer used in semiconductor devices. BS IEC 63068 ‑ 2 is the second part of the series of documents that provides definitions and guidance in the use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. BS IEC 63068

BS IEC 63068-2:2019 PDF

Abstract

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