Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for GaN crystal surface defects - Method for determining etch pit density
Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for GaN crystal surface defects - Method for determining etch pit density
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1 Scope This document describes a method for determining the etch pit density, which is used to detect dislocations and processing-introduced defects that occur on single-crystal GaN substrates or single-crystal GaN films. It is applicable to the defects specified in ISO 5618‑1 from among the defects exposed on the surface of the following types of GaN substrates or films: single-crystal GaN substrate; single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; or single-crystal GaN film formed by heteroepitaxial growth on a single-crystal Al 2 O 3 , SiC, or Si substrate. It is applicable to defects with an etch pit density of ≤ 7 × 10 7 cm -2 .
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