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IEC 60747-9:2019 PDF

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

Название (английский):
IEC 60747-9:2019

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

Статус документа:
Действующий
Формат:
Электронный (PDF)
Количество страниц:
160
Дата публикации:
13 ноября 2019 г.
Издание:
IEC IS 60747 edition 3 version 1
ICS:
31.080.01
Описание (английский):

IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). This third edition includes the following significant technical changes with respect to the previous edition: reverse-blocking IGBT and its related technical contents have been added; reverse-conducting IGBT and its related technical contents have been added; some parts of the previous edition have been amended, combined or deleted.

Технические детали

Технический комитет
SC 47E - Discrete semiconductor devices
SKU
IEC 60747-9:2019