PD IEC TS 62607-12-3:2026 PDF
Nanomanufacturing. Key control characteristics - 2D material-related products. Schottky barrier heights of 2D material based field-effect transistors: temperature-dependent current-voltage measurements
Название (английский):
PD IEC TS 62607-12-3:2026
Nanomanufacturing. Key control characteristics - 2D material-related products. Schottky barrier heights of 2D material based field-effect transistors: temperature-dependent current-voltage measurements
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Дата публикации:
- 30 июня 2026 г.
- ICS:
- 07.120
- SKU:
- PD IEC TS 62607-12-3:2026