1 Scope
This Technical Report describes a method for determining ion- sputtering rates for depth profiling measurements with Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) where the specimen is ion-sputtered over a region with an area between 0,4 mm 2 and 3,0 mm 2 . This Technical Report is applicable only to a laterally homogeneous bulk or single-layered material where the ion- sputtering rate is determined from the sputtered depth , as measured by a mechanical stylus profilometer, and sputtering time .
This Technical Report provides a method to convert the ion- sputtering time scale to sputtered depth in a depth profile by assuming a constant sputtering velocity. This method has not been designed for, or tested using, a scanning probe microscope system. It is not applicable to the case where the sputtered area is less than 0,4 mm 2 or where the sputter-induced surface roughness is significant compared with the sputtered depth to be measured.