Overview
IEC 63229:2021 - "Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate" - provides internationally agreed guidelines for defining and classifying defects observed in as‑grown GaN epitaxial films deposited on SiC substrates. The standard uses schematic drawings, optical microscope (OM) and transmission electron microscope (TEM) images to identify and describe defects. It covers defects intrinsic to the epitaxial growth on SiC (including common SiC polytypes such as 4H and 6H) and explicitly excludes defects introduced by later processing steps.
Key topics
- Scope and terminology: precise definitions for GaN, SiC, epitaxial film, crystal directions, point/line/ surface defects, dislocations, Burgers vector, Schottky and Frenkel defects, etc.
- Defect classification: a structured taxonomy of defects in GaN-on‑SiC films, including:
- Point defects: vacancy, interstitial, substitutional, point defect complexes
- Extended defects: threading dislocations, macroscopic dislocations
- Surface/morphological defects: hillocks, pits, scratches
- Volume defects: inclusions, cracks
- A catch‑all “others” class for atypical features
- Illustrative examples: schematic, OM and TEM imagery provided to standardize visual identification and communication.
- Measurement context: guidance focuses on identification and classification rather than quantitative acceptance limits - directed at as‑grown film inspection only.
Applications
- Establishes a common language for defect characterization in GaN epitaxy on SiC, improving consistency across:
- Epitaxial process development and optimization (MOCVD/MBE teams)
- Incoming/outgoing quality control and inspection protocols
- Failure analysis and reliability assessment for high‑power/high‑frequency GaN devices
- Supplier–customer communication and datasheet reporting
- Useful for labs performing OM/TEM analysis, device manufacturers targeting GaN‑on‑SiC RF and power applications, and researchers comparing defect populations.
Who should use this standard
- Epitaxy and process engineers working on GaN-on‑SiC
- Quality assurance, metrology, and failure analysis teams
- Semiconductor device designers and reliability engineers
- Test laboratories, academic researchers, and standards bodies involved in wide‑bandgap semiconductor technology
Related information
- IEC 63229 complements other IEC publications on semiconductor device terminology and epitaxy practices (see IEC Electropedia and IEC webstore for related standards and the latest editions). For purchase or to view the official document, consult the IEC Webstore.
Keywords: IEC 63229, GaN epitaxial film, SiC substrate, GaN‑on‑SiC defects, defect classification, TEM, optical microscopy, threading dislocation, vacancy, semiconductor standards.