ISO 17475:2005 PDF

Corrosion of metals and alloys — Electrochemical test methods — Guidelines for conducting potentiostatic and potentiodynamic polarization measurements

Название (английский):

ISO 17475:2005

Corrosion of metals and alloys — Electrochemical test methods — Guidelines for conducting potentiostatic and potentiodynamic polarization measurements

Статус документа:: Действующий
Формат:: Электронный (PDF)
Количество страниц:: 13
Дата публикации:: 12 октября 2005 г.
Издание:: ISO IS 17475 edition 1 version 1
ICS:: 77.060

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Описание (английский):

ISO 17475:2005 applies to corrosion of metals and alloys, and describes the procedure for conducting potentiostatic and potentiodynamic polarization measurements. The test method can be used to characterise the electrochemical kinetics of anodic and cathodic reactions, the onset of localised corrosion and the repassivation behaviour of a metal.

Технические детали

Технический комитет: ISO/TC 156 - Corrosion of metals and alloys
SKU: ISO 17475:2005

Abstract

Overview

ISO 17475:2005 - "Corrosion of metals and alloys - Electrochemical test methods - Guidelines for conducting potentiostatic and potentiodynamic polarization measurements" - provides standardized guidance for performing electrochemical polarization tests on metals and alloys. The standard describes how to run potentiostatic (stepwise potential holding) and potentiodynamic (continuous potential scan) polarization measurements to characterise anodic and cathodic kinetics, the onset of localised corrosion (pitting, crevice, intergranular) and repassivation behaviour.

Key topics and requirements

Test principle: Relates measured current to displacement from the open-circuit (free corrosion) potential to reveal anodic/cathodic kinetics and active–passive behaviour.
Potentiostatic vs potentiodynamic: Defines step-hold potentiostatic testing and continuous-scan potentiodynamic testing, and explains the effects of hold time and scan rate on results.
Apparatus and performance:
- Potentiostat capability (example: control within ±1 mV) and scanning functions for potentiodynamic tests.
- Instruments with adequate sensitivity (able to detect ~1 mV changes) and suitable current-measurement accuracy (document references 0.5 % max error as a guideline).
- Test cell design: working electrode (test specimen), reference electrode, auxiliary (counter) electrode, Luggin capillary placement, inert cell materials and appropriate solution volume to avoid chemistry changes during testing.
Reference and auxiliary electrodes: Selection and placement (including salt bridges, double junctions and Luggin capillaries) to minimize ohmic drop and contamination. Annex B gives common reference electrode potentials versus SHE at 25 °C.
Specimen and solution preparation: Defined surface finish (e.g., Ra

Overview

Key topics and requirements

Test principle: Relates measured current to displacement from the open-circuit (free corrosion) potential to reveal anodic/cathodic kinetics and active–passive behaviour.
Potentiostatic vs potentiodynamic: Defines step-hold potentiostatic testing and continuous-scan potentiodynamic testing, and explains the effects of hold time and scan rate on results.
Apparatus and performance:
- Potentiostat capability (example: control within ±1 mV) and scanning functions for potentiodynamic tests.
- Instruments with adequate sensitivity (able to detect ~1 mV changes) and suitable current-measurement accuracy (document references 0.5 % max error as a guideline).
- Test cell design: working electrode (test specimen), reference electrode, auxiliary (counter) electrode, Luggin capillary placement, inert cell materials and appropriate solution volume to avoid chemistry changes during testing.
Reference and auxiliary electrodes: Selection and placement (including salt bridges, double junctions and Luggin capillaries) to minimize ohmic drop and contamination. Annex B gives common reference electrode potentials versus SHE at 25 °C.
Specimen and solution preparation: Defined surface finish (e.g., Ra

ISO 17475:2005 PDF

Технические детали

Abstract

Overview

Key topics and requirements

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Abstract

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