ISO 17560:2002 PDF
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
Название (английский):
ISO 17560:2002
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
- Статус документа:
- Отменён
- Формат:
- Электронный (PDF)
- Количество страниц:
- 10
- Дата публикации:
- 18 июля 2002 г.
- Издание:
- ISO IS 17560 edition 1 version 1
- ICS:
- 71.040.40
Описание (английский):
ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1×1016 atoms/cm3 and 1×1020 atoms/cm3, and to crater depths of 50 nm or deeper.
Технические детали
- Технический комитет
- ISO/TC 201/SC 6 - Secondary ion mass spectrometry
- SKU
- ISO 17560:2002