ISO 23812:2009 PDF
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials
Название (английский):
ISO 23812:2009
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 19
- Дата публикации:
- 8 апреля 2009 г.
- Издание:
- ISO IS 23812 edition 1 version 1
- ICS:
- 71.040.40
Описание (английский):
ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials. It is not applicable to the surface-transient region where the sputtering rate is not in the steady state. It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
Технические детали
- Технический комитет
- ISO/TC 201/SC 6 - Secondary ion mass spectrometry
- SKU
- ISO 23812:2009