Nanomanufacturing. Key control characteristics - Two-dimensional materials. Carrier concentration: Field effect transistor method
Nanomanufacturing. Key control characteristics - Two-dimensional materials. Carrier concentration: Field effect transistor method
Мы хотим включить аналитику посещений, чтобы понимать, что искать людям на сайте. Без вашего согласия счётчики не загружаются. Политика конфиденциальности
1 Scope This part of IEC TS 62607 establishes a standardized method to determine the key control characteristic
carrier concentration for semiconducting two-dimensional materials by the
field effect transistor (FET) method.
For semiconducting two-dimensional materials, the carrier concentration is evaluated using a field effect transistor (FET) test by a measurement of the voltage shift obtained from transfer curve upon doping process. The FET test structure consists of three terminals of source, drain, and gate where voltage is applied to induce the transistor action. Transfer curves are obtained by measuring drain current while applying varied gate voltage and constant drain voltage with respect to the source which is grounded.
The method is applicable to semiconducting two-dimensional materials with a bandgap like that in transition metal dichalcogenides (MoS 2 , MoTe 2 , WS 2 , WSe 2 , etc.) and black phosphorous. Pristine graphene shows semi-metallic characteristics without bandgap, and therefore this method is not applicable to pristine graphene. However, it can be used for other graphenes with bandgap (for example, semiconducting graphene oxide).
Другие стандарты PD